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Title: In situ Raman monitoring of He{sup 2+} irradiation induced damage in a UO{sub 2} ceramic

The in situ Raman probing of a UO{sub 2} ceramic in [Ar/H{sub 2}, 95/5] gas atmosphere followed by exposure to He{sup 2+} ionic irradiation coming from a cyclotron accelerator was implemented. It was observed that the growth of Raman defect bands exhibits a unique kinetic nicely modelized by a simple direct impact model, and with an annealing rate constant of 5.6 × 10{sup −4} ± 4 × 10{sup −5} s{sup −1} for an ionic flow of 50 nA and an ions-beam induced sample heating of 170 ± 10 °C. Also, it was observed that the Ar plasma induced by the ions-beam is a sensitive probe of the presence of the ions-beam.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ;  [3]
  1. CNRS/UPR3079 CEMHTI, 45071 Orléans Cedex 2 et Université d'Orléans, 45067 Orléans Cedex 2 (France)
  2. CEA/DEN/DEC Bat 352 Cadarache, 13108 Saint Paul lez Durance (France)
  3. CEA/DTCD/SECM/LMPA, Marcoule 30207 Bagnols Sur Ceze (France)
Publication Date:
OSTI Identifier:
22218301
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CERAMICS; CYCLOTRONS; DAMAGE; HEATING; HELIUM IONS; HYDROGEN; ION BEAMS; IRRADIATION; MONITORING; PLASMA; PROBES; RAMAN SPECTRA; REACTION KINETICS; URANIUM DIOXIDE