In situ Raman monitoring of He{sup 2+} irradiation induced damage in a UO{sub 2} ceramic
- CNRS/UPR3079 CEMHTI, 45071 Orléans Cedex 2 et Université d'Orléans, 45067 Orléans Cedex 2 (France)
- CEA/DEN/DEC Bat 352 Cadarache, 13108 Saint Paul lez Durance (France)
- CEA/DTCD/SECM/LMPA, Marcoule 30207 Bagnols Sur Ceze (France)
The in situ Raman probing of a UO{sub 2} ceramic in [Ar/H{sub 2}, 95/5] gas atmosphere followed by exposure to He{sup 2+} ionic irradiation coming from a cyclotron accelerator was implemented. It was observed that the growth of Raman defect bands exhibits a unique kinetic nicely modelized by a simple direct impact model, and with an annealing rate constant of 5.6 × 10{sup −4} ± 4 × 10{sup −5} s{sup −1} for an ionic flow of 50 nA and an ions-beam induced sample heating of 170 ± 10 °C. Also, it was observed that the Ar plasma induced by the ions-beam is a sensitive probe of the presence of the ions-beam.
- OSTI ID:
- 22218301
- Journal Information:
- Applied Physics Letters, Vol. 103, Issue 4; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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