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Title: Quantum effects in electron beam pumped GaAs

Propagation of waves in nano-sized GaAs semiconductor induced by electron beam are investigated. A dispersion relation is derived by using quantum hydrodynamics equations including the electrons and holes quantum recoil effects, exchange-correlation potentials, and degenerate pressures. It is found that the propagating modes are instable and strongly depend on the electron beam parameters, as well as the quantum recoil effects and degenerate pressures. The instability region shrinks with the increase of the semiconductor number density. The instability arises because of the energetic electron beam produces electron-hole pairs, which do not keep in phase with the electrostatic potential arising from the pair plasma.
Authors:
 [1] ;  [2] ;  [3] ;  [4]
  1. Faculty of Engineering, The British University in Egypt (BUE), El-Shorouk City, Cairo (Egypt)
  2. (NILES), Cairo University (Egypt)
  3. National Institute of Laser Enhanced Sciences (NILES), Cairo University (Egypt)
  4. Department of Physics, Faculty of Science, Port Said University, Port Said (Egypt)
Publication Date:
OSTI Identifier:
22218130
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CORRELATIONS; DISPERSION RELATIONS; ELECTRON BEAMS; GALLIUM ARSENIDES; HOLES; HYDRODYNAMICS; NANOSTRUCTURES; PLASMA; PLASMA INSTABILITY; POTENTIALS; PUMPS; RECOILS; SEMICONDUCTOR MATERIALS; TAIL ELECTRONS