skip to main content

SciTech ConnectSciTech Connect

Title: Near sputter-threshold GaSb nanopatterning

Nanopatterning at sputter-threshold energies with Ar irradiation of GaSb (100) surfaces is presented. Comparison with high-energy irradiations up to 1000 eV is conducted measuring in-situ the composition evolution over irradiation time at early stages (e.g., <10{sup 17} cm{sup −2}) and up to nanostructure saturation (e.g., ∼10{sup 18} cm{sup −2}). Low-energy irradiation is conducted for energies between 15–100 eV and a low-aspect ratio nanostructured dot formation is found. Furthermore, the role of oxide on GaSb is found to delay nanostructure formation and this is predominant at energies below 100 eV. In-situ quartz crystal microbalance measurements collect sputtered particles yielding the sputter rate at threshold energies indicating a correlation between erosion and surface composition consistent with recent theoretical models. Ion-induced segregation is also found and indicated by both compositional measurements of both the surface and the sputtered plume.
Authors:
;  [1] ;  [2] ;  [2] ;  [3]
  1. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
  2. (United States)
  3. School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)
Publication Date:
OSTI Identifier:
22218067
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; EV RANGE; FABRICATION; GALLIUM ANTIMONIDES; ION BEAMS; IONS; IRRADIATION; NANOSTRUCTURES; OXIDES; QUARTZ; SEMICONDUCTOR MATERIALS; SPUTTERING; SURFACES; THRESHOLD ENERGY