Influence of n{sup +} and p{sup +} doping on the lattice sites of implanted Fe in Si
- IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia da Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal)
- Instituto Superior Técnico/Instituto Tecnológico e Nuclear, Universidade de Lisboa, 2695-066 Bobadela (Portugal)
We report on the lattice location of implanted {sup 59}Fe in n{sup +}- and p{sup +}-type Si by means of emission channeling. We found clear evidence that the preferred lattice location of Fe changes with the doping of the material. While in n{sup +}-type Si Fe prefers displaced bond-centered (BC) sites for annealing temperatures up to 600 °C, changing to ideal substitutional sites above 700 °C, in p{sup +}-type Si, Fe prefers to be in displaced tetrahedral interstitial positions after all annealing steps. The dominant lattice sites of Fe in n{sup +}-type Si therefore seem to be well characterized for all annealing temperatures by the incorporation of Fe into vacancy-related complexes, either into single vacancies which leads to Fe on ideal substitutional sites, or multiple vacancies, which leads to its incorporation near BC sites. In contrast, in p{sup +}-type Si, the major fraction of Fe is clearly interstitial (near-T or ideal T) for all annealing temperatures. The formation and possible lattice sites of Fe in FeB pairs in p{sup +}-Si are discussed. We also address the relevance of our findings for the understanding of the gettering effects caused by radiation damage or P-diffusion, the latter involving n{sup +}-doped regions.
- OSTI ID:
- 22218058
- Journal Information:
- Journal of Applied Physics, Vol. 114, Issue 10; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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