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Title: A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment

This paper proposes a photoresist removal process that uses multibubble microwave plasma produced in ultrapure water. A non-implanted photoresist and various kinds of ion-implanted photoresists such as B, P, and As were treated with a high ion dose of 5 × 10{sup 15} atoms/cm{sup 2} at an acceleration energy of 70 keV; this resulted in fast removal rates of more than 1 μm/min. When the distance between multibubble microwave plasma and the photoresist film was increased by a few millimeters, the photoresist removal rates drastically decreased; this suggests that short-lived radicals such as OH affect high-speed photoresist removal.
Authors:
 [1] ;  [2] ; ;  [1] ;  [3] ; ;  [4]
  1. Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan)
  2. Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan)
  3. (Japan)
  4. Department of Applied Chemistry, Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838 (Japan)
Publication Date:
OSTI Identifier:
22217940
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACCELERATION; ATOMS; DISTANCE; DOSES; FILMS; KEV RANGE; MATERIALS; MICROWAVE RADIATION; MIXTURES; PLASMA; PROCESSING; RADICALS; REMOVAL; VELOCITY; WATER