A high-speed photoresist removal process using multibubble microwave plasma under a mixture of multiphase plasma environment

Journal Article · Mon Sep 30 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4823530· OSTI ID:22217940

Ishijima, Tatsuo ^[1]; Nosaka, Kohei ^[2]; Tanaka, Yasunori; Uesugi, Yoshihiko ^[1]; Goto, Yousuke; Horibe, Hideo ^[3]

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1. Research Center for Sustainable Energy and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan)
2. Graduate School of Natural Science and Technology, Kanazawa University, Kakuma-machi, Kanazawa, Ishikawa 920-1192 (Japan)
3. Department of Applied Chemistry, Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838 (Japan)

This paper proposes a photoresist removal process that uses multibubble microwave plasma produced in ultrapure water. A non-implanted photoresist and various kinds of ion-implanted photoresists such as B, P, and As were treated with a high ion dose of 5 × 10{sup 15} atoms/cm{sup 2} at an acceleration energy of 70 keV; this resulted in fast removal rates of more than 1 μm/min. When the distance between multibubble microwave plasma and the photoresist film was increased by a few millimeters, the photoresist removal rates drastically decreased; this suggests that short-lived radicals such as OH affect high-speed photoresist removal.

• OSTI ID: 22217940
• Journal Information: Applied Physics Letters, Vol. 103, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACCELERATION
ATOMS
DISTANCE
DOSES
FILMS
KEV RANGE
MATERIALS
MICROWAVE RADIATION
MIXTURES
PLASMA
PROCESSING
RADICALS
REMOVAL
VELOCITY
WATER