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Title: The relationship between depth-resolved composition and strain relaxation in InAlN and InGaN films grown by molecular beam epitaxy

A study of the relationship between strain and the incorporation of group III elements in ternary InGaN and InAlN grown by molecular beam epitaxy is reported. Using X-ray Photoelectron Spectroscopy compositional depth profiles with x-ray diffraction, we are able to find a clear relationship between strain and In incorporation including tensile-strained InAlN which has, to date, not been studied. The results show that fully strained films contain homogeneous indium composition while partially relaxed films have a non-homogeneous indium composition with depth. These results can be interpreted by considering the impurity formation energies of indium in host lattices.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)
  2. Department of Physics, Duke University, Durham, North Carolina 27708 (United States)
Publication Date:
OSTI Identifier:
22217904
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 103; Journal Issue: 16; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; ALUMINIUM COMPOUNDS; DEPTH; FILMS; FORMATION HEAT; GALLIUM COMPOUNDS; IMPURITIES; INDIUM; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS; STRAINS; STRESS RELAXATION; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY