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Title: Defects in paramagnetic Co-doped ZnO films studied by transmission electron microscopy

We study planar defects in epitaxial Co:ZnO dilute magnetic semiconductor thin films deposited on c-plane sapphire (Al{sub 2}O{sub 3}), as well as the Co:ZnO/Al{sub 2}O{sub 3} interface, using aberration-corrected transmission electron microscopy and electron energy-loss spectroscopy. Co:ZnO samples that were deposited using pulsed laser deposition and reactive magnetron sputtering are both found to contain extrinsic stacking faults, incoherent interface structures, and compositional variations within the first 3–4 Co:ZnO layers next to the Al{sub 2}O{sub 3} substrate. The stacking fault density is in the range of 10{sup 17} cm{sup −3}. We also measure the local lattice distortions around the stacking faults. It is shown that despite the relatively high density of planar defects, lattice distortions, and small compositional variation, the Co:ZnO films retain paramagnetic properties.
Authors:
; ; ;  [1] ; ;  [2] ;  [3] ; ;  [4]
  1. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute, Forschungszentrum Jülich, 52425 Jülich (Germany)
  2. Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität, Altenberger Str. 69, 4040 Linz (Austria)
  3. Departamento de Ingeniería Informática, Universidad de Cádiz, 11510 Cádiz (Spain)
  4. Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99354 (United States)
Publication Date:
OSTI Identifier:
22217721
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; COBALT; DEFECTS; DEPOSITS; DOPED MATERIALS; ENERGY BEAM DEPOSITION; ENERGY-LOSS SPECTROSCOPY; EPITAXY; LASER RADIATION; LAYERS; MAGNETIC SEMICONDUCTORS; PARAMAGNETISM; PULSED IRRADIATION; SAPPHIRE; SPUTTERING; STACKING FAULTS; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZINC OXIDES