Long-persistent luminescence in near-ultraviolet from silicon nanowires
- School of Science, Nantong University, Nantong 226000 (China)
- National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
- Natural Sciences Department, Albany State University, Albany, GA 31705 (United States)
Graphical abstract: Silicon-rich nanowires with persistent near-ultraviolet luminescence were fabricated with thermal evaporation of silicon monoxide (SiO) powder at 1350 K. They contain quantum-confined elemental silicon structures of the order of nm dimension, and are capped by silicon oxide. The samples exhibit orderly color distribution along the direction of the carrier gas flow. When excited with the 280 nm light, the samples emit broad photoluminescence band from 330 to 470 nm with a long afterglow of more than 10 s, and the color shifts from near-ultraviolet to blue and green gradually. Display Omitted Highlights: ► We synthesized Si-rich nanowire from thermal evaporation of silicon monoxide. ► The Si-rich nanowires exhibit orderly color distribution along the direction of the gas flow. ► The Si-rich nanowires emit broad photoluminescence band from 330 to 470 nm under UV irradiation for >10 s. ► The color shifts from near-ultraviolet to blue and green gradually. -- Abstract: Silicon-rich nanowires with persistent near-ultraviolet luminescence were fabricated with thermal evaporation of silicon monoxide (SiO) powder at 1350 K. They contain quantum-confined elemental silicon structures of the order of nm dimension, and are capped by silicon oxide. The samples exhibit orderly color distribution along the direction of the carrier gas flow. When excited with the 280 nm light, the samples emit broad photoluminescence band from 330 to 470 nm with a long afterglow of more than 10 s, and the color shifts from near-ultraviolet to blue and green gradually. The morphology dependent luminescence might be attributed to the emission from the quantum-confined silicon crystallites of various sizes embedded in the oxide layer, and near surface states in the nanowires.
- OSTI ID:
- 22215775
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 1; Other Information: Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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