Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates
- Moldova State University, 60 A. Mateevici Str., Chisinau, MD 2009, Republic of Moldova (Moldova, Republic of)
- Vasile Alecsandri University of Bacau, 157 Calea Marasesti, RO 600115 Bacau (Romania)
- Faculty of Physics, University of Bucharest, Platforma Magurele, Str. Fizicienilor nr. 1, CP Mg - 11, Bucharest-Magurele, RO 76900 (Romania)
Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.
- OSTI ID:
- 22212470
- Journal Information:
- Materials Research Bulletin, Vol. 47, Issue 3; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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