Structural and optical characterizations of chemically deposited cadmium selenide thin films
- Department of Chemistry, Government Rajaram College, S. U. Road, Vidyanagar, Kolhapur 416 004, Maharashtra (India)
Highlights: {yields} CdSe thin films deposited first time using formic acid as a complexing agent. {yields} The deposited thin films were characterized by XRD, SEM, UV-vis-NIR and electrical techniques. {yields} X-ray diffraction analysis shows presence of zinc blende crystal structure. -- Abstract: Synthesis of cadmium selenide thin films by CBD method has been presented. The deposited film samples were subjected to XRD, SEM, UV-vis-NIR and TEP characterization. X-ray diffraction analysis showed that CdSe film sample crystallized in zinc blende or cubic phase structure. SEM studies reveal that the grains are spherical in shape and uniformly distributed all over the surface of the substrates. The optical band gap energy of as deposited film sample was found to be in the order of 1.8 eV. The electrical conductivity of the film sample was found to be 10{sup -6} ({Omega} cm){sup -1} with n-type of conduction mechanism.
- OSTI ID:
- 22210082
- Journal Information:
- Materials Research Bulletin, Vol. 46, Issue 10; Other Information: Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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