Performance improvement of Ge-Sb-Te material by GaSb doping for phase change memory

Journal Article · Mon Jun 17 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4809735· OSTI ID:22163031

Lu, Yegang ^[1]; Zhang, Zhonghua; Song, Sannian; Cheng, Limin; Song, Zhitang ^[1]; Shen, Xiang; Wang, Guoxiang; Dai, Shixun ^[2]

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1. State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)
2. Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211 (China)

Effects of GaSb doping on phase change characteristics of Ge-Sb-Te material are investigated by in situ resistance and x-ray diffraction measurement, optical spectroscopy, and x-ray photoelectron spectroscopy. The crystallization temperature and data retention of Ge-Sb-Te material increase significantly by the addition of GaSb, which results from the high thermal stability of amorphous GaSb. In addition, GaSb-doped Ge-Sb-Te material exhibits faster crystallization speed due to the change in electronic states as a result of the formation of chemical bonds with Ga element. Incorporation of GaSb is highly effective way to enhance the comprehensive performance of Ge-Sb-Te material for phase change memory.

• OSTI ID: 22163031
• Journal Information: Applied Physics Letters, Vol. 102, Issue 24; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY ALLOYS
CHEMICAL BONDS
CRYSTALLIZATION
DOPED MATERIALS
GALLIUM ALLOYS
GALLIUM ANTIMONIDES
GERMANIUM ALLOYS
RETENTION
STABILITY
TELLURIUM ALLOYS
TERNARY ALLOY SYSTEMS
X-RAY DIFFRACTION
X-RAY PHOTOELECTRON SPECTROSCOPY