In situ study of HfO{sub 2} atomic layer deposition on InP(100)

Journal Article · Mon Apr 29 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4803486· OSTI ID:22162878

Dong, H.; Brennan, B.; Kim, J.; Hinkle, C. L.; Wallace, R. M. ^[1]; Zhernokletov, D. ^[2]

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1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
2. Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)

The interfacial chemistry of the native oxide and chemically treated InP samples during atomic layer deposition (ALD) HfO{sub 2} growth at 250 Degree-Sign C has been studied by in situ X-ray photoelectron spectroscopy. The In-oxide concentration is seen to gradually decrease on the native oxide and acid etched samples. No significant changes of the P-oxide concentrations are detected, while the P-oxides chemical states are seen to change gradually during the initial cycles of ALD on the native oxide and the chemically treated samples. (NH{sub 4}){sub 2}S treatment strongly decreases In-oxide and P-oxide concentrations prior to ALD and maintains low concentrations during the ALD process.

• OSTI ID: 22162878
• Journal Information: Applied Physics Letters, Vol. 102, Issue 17; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CHEMICAL STATE
CRYSTAL GROWTH
DEPOSITION
ETCHING
HAFNIUM OXIDES
INDIUM PHOSPHIDES
SUBSTRATES
X-RAY PHOTOELECTRON SPECTROSCOPY