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Title: Passivation of In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces by AlN atomic layer deposition process

Reducing defects at III-V/high-k interfaces is essential for optimizing devices built on these materials. Here, the role of an interfacial AlN process at In{sub 0.53}Ga{sub 0.47}As/ZrO{sub 2} interfaces is investigated by hard x-ray photoelectron spectroscopy (HAXPES) and capacitance/voltage (C-V) measurements. C-V measurements show a significant reduction in the density of interface traps with the interfacial AlN process and a capping TiN layer. To elucidate the specific role of the AlN process, blanket films with various deposition processes are compared. The AlN process alone (without subsequent dielectric deposition) reduces InGaAs oxide levels below the HAXPES detection limit, even though the AlN is ultimately found to be oxidized into AlO{sub x} with only trace N incorporation, yet AlN passivation provides a lower D{sub it} (density of interface traps) when compared with an H{sub 2}O-based Al{sub 2}O{sub 3} deposition. The AlN process does not passivate against re-oxidation of the InGaAs during an O{sub 3} based ZrO{sub 2} deposition process, but it does provide passivation against As-As development during subsequent TiN deposition. The role of chemical defects in the C-V characteristics is also discussed.
Authors:
;  [1] ;  [2] ; ;  [3]
  1. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
  2. National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973 (United States)
  3. SEMATECH, 257 Fuller Road, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22122843
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 3; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; ALUMINIUM OXIDES; CRYSTAL DEFECTS; DIELECTRIC MATERIALS; EQUIPMENT; FILMS; GALLIUM ARSENIDES; HARD X RADIATION; INDIUM ARSENIDES; INTERFACES; LAYERS; OXIDATION; PASSIVATION; SEMICONDUCTOR MATERIALS; SENSITIVITY; TITANIUM NITRIDES; WATER; X-RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM OXIDES