Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
The photoluminescence and luminescence excitation spectra and the edge and IR absorption of Ge-S-Ga(In) glassy semiconductor systems are studied. The observed shifts of the optical-absorption edge, photoluminescence spectra (a decrease in their full width at half-maximum), and luminescence excitation spectra to lower energies upon the introduction of Ga or In into Ge-S binary systems are due to the fact that Ga or In tend to interact with sulfur, rather than with germanium. As the content of Ga(In) in the system increases, the intensity of the absorption band associated with vibrations of the Ge-S bond decreases.
- OSTI ID:
- 22121708
- Journal Information:
- Semiconductors, Vol. 47, Issue 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling
Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence
Journal Article
·
Tue Aug 26 00:00:00 EDT 2014
· ACS Nano
·
OSTI ID:22121708
+1 more
Radiative and non-radiative recombinations in tensile strained Ge microstrips: Photoluminescence experiments and modeling
Journal Article
·
Mon Dec 21 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22121708
Quasi-Fermi level splitting and sub-bandgap absorptivity from semiconductor photoluminescence
Journal Article
·
Fri Nov 07 00:00:00 EST 2014
· Journal of Applied Physics
·
OSTI ID:22121708