skip to main content

SciTech ConnectSciTech Connect

Title: Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems

The photoluminescence and luminescence excitation spectra and the edge and IR absorption of Ge-S-Ga(In) glassy semiconductor systems are studied. The observed shifts of the optical-absorption edge, photoluminescence spectra (a decrease in their full width at half-maximum), and luminescence excitation spectra to lower energies upon the introduction of Ga or In into Ge-S binary systems are due to the fact that Ga or In tend to interact with sulfur, rather than with germanium. As the content of Ga(In) in the system increases, the intensity of the absorption band associated with vibrations of the Ge-S bond decreases.
Authors:
 [1] ;  [2]
  1. Russian Academy of Sciences, Amirkhanov Institute of Physics, Dagestan Scientific Center (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
Publication Date:
OSTI Identifier:
22121708
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 47; Journal Issue: 7; Other Information: Copyright (c) 2013 Pleiades Publishing, Ltd.; http://www.springer-ny.com; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY; ENERGY ABSORPTION; EXCITATION; GALLIUM SULFIDES; GERMANIUM SULFIDES; INDIUM SULFIDES; INFRARED RADIATION; NANOSTRUCTURES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SPECTRA; SULFUR