Investigation of structure, magnetic, and transport properties of Mn-doped SiC films

Journal Article · Mon Jul 15 00:00:00 EDT 2013 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films

DOI:https://doi.org/10.1116/1.4809586· OSTI ID:22121656

Xianke, Sun ^[1]; Ruisong, Guo ^[1]; Yukai, An ^[2]; Jiwen, Liu ^[1]

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1. School of Material Science and Engineering, Tianjin University, Tianjin 300172 (China)
2. Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology, Tianjin 300384 (China)

Mn-doped SiC films were fabricated by radio frequency magnetron sputtering technique. The structure, composition, and magnetic and transport properties of the films were investigated. The results show the films have the 3C-SiC crystal structure and the doped Mn atoms in the form of Mn{sup 2+} ions substitute for C sites in SiC lattice. All the films are ferromagnetic at 300 K, and the ferromagnetism in films arises from the doped Mn atoms and some extended defects. In addition, the saturation magnetization increases with the Mn-doped concentration increasing. The Mn doping does not change the semiconductor characteristics of the SiC films.

• OSTI ID: 22121656
• Journal Information: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 31, Issue 4; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL STRUCTURE
DEFECTS
DEPOSITION
DOPED MATERIALS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
MAGNETIZATION
MAGNETRONS
MANGANESE IONS
RADIOWAVE RADIATION
SEMICONDUCTOR MATERIALS
SILICON CARBIDES
SPUTTERING
TEMPERATURE RANGE 0273-0400 K
THIN FILMS