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Title: Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate

The conditions for the growth of stoichiometric GdTiO{sub 3} thin films by molecular beam epitaxy (MBE) are investigated. It is shown that relatively high growth temperatures (>750 Degree-Sign C) are required to obtain an MBE growth window in which only the stoichiometric film grows for a range of cation flux ratios. This growth window narrows with increasing film thickness. It is also shown that single-domain films are obtained by the growth on a symmetry-matched substrate. The influence of lattice mismatch strain on the electrical and magnetic characteristics of the GdTiO{sub 3} thin film is investigated.
Authors:
; ; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California, 93106-5050 (United States)
Publication Date:
OSTI Identifier:
22121655
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 31; Journal Issue: 4; Other Information: (c) 2013 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; CATIONS; CRYSTAL DEFECTS; CRYSTAL GROWTH; GADOLINIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; STRAINS; TEMPERATURE RANGE 1000-4000 K; THICKNESS; THIN FILMS; TITANATES