Generation of high-voltage pulses with subnanosecond front rise times in open discharge
- A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Lavrent'ev Ave. 13, Novosibirsk 630090 (Russian Federation)
The investigation results for plasma switching devices of high-voltage pulses with pulse rise times less than 1 ns are presented. The approach is based on using conditions suitable for bringing a gas discharge chamber in a state with high conductivity due to generation of an electron beam owing to photoelectron emission from the device cathode. It is shown that in co-axial geometry pulses, switching time 0.45 ns on an active load R{sub L} = 50 {Omega} at voltage U = 20 kV can be achieved. It is shown with the method of doubled impulses that such a device can regenerate the acceptable electric strength during 10 {mu}s. It is indicated of the principle possibility of working in the pulse-periodical regime to the repetition rate of 100 kHz.
- OSTI ID:
- 22107723
- Journal Information:
- Physics of Plasmas, Vol. 20, Issue 3; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1070-664X
- Country of Publication:
- United States
- Language:
- English
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