Study of asymmetries of Cd(Zn)Te devices investigated using photo-induced current transient spectroscopy, Rutherford backscattering, surface photo-voltage spectroscopy, and gamma ray spectroscopies

Journal Article · Mon Oct 01 00:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4754448· OSTI ID:22089483

Crocco, J.; Bensalah, H.; Zheng, Q.; Dieguez, E. ^[1]; Corregidor, V.; Avles, E. ^[2]; Castaldini, A.; Fraboni, B.; Cavalcoli, D.; Cavallini, A. ^[3]; Vela, O. ^[4]

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1. Crystal Growth Laboratory, Universidad Autonoma de Madrid, Madrid Spain (Spain)
2. Instituto Tecnologico e Nuclear UFA, Sacavem (Portugal)
3. PHoS Laboratory, Department of Physics, University of Bologna, Bologna (Italy)
4. Centro de Investigacion Energeticas Medioambientales y Tecnologicas (CIEMAT), Madrid (Spain)

Despite these recent advancements in preparing the surface of Cd(Zn)Te devices for detector applications, large asymmetries in the electronic properties of planar Cd(Zn)Te detectors are common. Furthermore, for the development of patterned electrode geometries, selection of each electrode surface is crucial for minimizing dark current in the device. This investigation presented here has been carried out with three objectives. Each objective is oriented towards establishing reliable methods for the selection of the anode and cathode surfaces independent of the crystallographic orientation. The objectives of this study are (i) investigate how the asymmetry in I-V characteristics of Cd(Zn)Te devices may be associated with the TeO2 interfacial layer using Rutherford backscattering to study the structure at the Au-Cd(Zn)Te interface, (ii) develop an understanding of how the concentration of the active traps in Cd(Zn)Te varies with the external bias, and (iii) propose non-destructive methods for selection of the anode and cathode which are independent of crystallographic orientation. The spectroscopic methods employed in this investigation include Rutherford backscattering spectroscopy, photo-induced current transient spectroscopy, and surface photo-voltage spectroscopy, as well as gamma ray spectroscopy to demonstrate the influence on detector properties.

• OSTI ID: 22089483
• Journal Information: Journal of Applied Physics, Vol. 112, Issue 7; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
CADMIUM COMPOUNDS
CRYSTALLOGRAPHY
ELECTRIC CONDUCTIVITY
GAMMA DETECTION
GAMMA SPECTROSCOPY
GOLD
INTERFACES
LAYERS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SURFACES
TELLURIUM COMPOUNDS
TRAPS
ZINC COMPOUNDS