Structural and optical properties of zinc oxide film using RF-sputtering technique

Journal Article · Tue Nov 27 00:00:00 EST 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4769172· OSTI ID:22075856

Hashim, A J; Jaafar, M S; Ghazai, Alaa J ^[1]

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1. Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Pinang (Malaysia)

This paper reports the fabrication of zinc oxide (ZnO) film using RF-sputtering technique. Determination of the structural properties using High Resolution X-ray Diffraction (HRXRD) confirmed that ZnO film deposited on silicon (Si) substrate has a high quality. This result is in line with the Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) which were used to image the morphology of the film, in which a rough surface was demonstrated. Photoluminescence (PL) emission is included to study the optical properties of ZnO film that shows two PL peak in the UV region at 371 nm and in visible region at 530 nm respectively.

• OSTI ID: 22075856
• Journal Information: AIP Conference Proceedings, Vol. 1502, Issue 1; Conference: ICONT 2011: International conference on nanotechnology - Research and commercialization 2011, Sabah (Malaysia), 6-9 Jun 2011; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
DEPOSITION
FABRICATION
MORPHOLOGY
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
SURFACES
THIN FILMS
X-RAY DIFFRACTION
ZINC OXIDES