Predictive process simulation of cryogenic implants for leading edge transistor design

Journal Article · Tue Nov 06 00:00:00 EST 2012 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4766529· OSTI ID:22075704

Gossmann, Hans-Joachim; Zographos, Nikolas; Park, Hugh; Colombeau, Benjamin; Parrill, Thomas; Khasgiwale, Niranjan; Borges, Ricardo; Gull, Ronald; Erokhin, Yuri ^[1]

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1. Applied Materials, Inc., Varian Semiconductor Equipment Business Unit, 35 Dory Road, Gloucester, MA 01930 (United States)

Two cryogenic implant TCAD-modules have been developed: (i) A continuum-based compact model targeted towards a TCAD production environment calibrated against an extensive data-set for all common dopants. Ion-specific calibration parameters related to damage generation and dynamic annealing were used and resulted in excellent fits to the calibration data-set. (ii) A Kinetic Monte Carlo (kMC) model including the full time dependence of ion-exposure that a particular spot on the wafer experiences, as well as the resulting temperature vs. time profile of this spot. It was calibrated by adjusting damage generation and dynamic annealing parameters. The kMC simulations clearly demonstrate the importance of the time-structure of the beam for the amorphization process: Assuming an average dose-rate does not capture all of the physics and may lead to incorrect conclusions. The model enables optimization of the amorphization process through tool parameters such as scan speed or beam height.

• OSTI ID: 22075704
• Journal Information: AIP Conference Proceedings, Vol. 1496, Issue 1; Conference: 19. international conference on ion implantation technology, Valladolid (Spain), 25-29 Jun 2012; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
AMORPHOUS STATE
ANNEALING
CALIBRATION
COMPUTERIZED SIMULATION
DOPED MATERIALS
DOSE RATES
IMPLANTS
ION IMPLANTATION
MONTE CARLO METHOD
OPTIMIZATION
PHASE TRANSFORMATIONS
PHYSICAL RADIATION EFFECTS
TIME DEPENDENCE
TRANSISTORS
VELOCITY