Electron mobility and effective mass in composite InGaAs quantum wells with InAs and GaAs nanoinserts

Journal Article · Sun Apr 15 00:00:00 EDT 2012 · Semiconductors

DOI:https://doi.org/10.1134/S1063782612040173· OSTI ID:22038999

Vasil'evskii, I S ^[1]; Galiev, G B; Klimov, E A ^[2]; Khabibullin, R A ^[1]; Kulbachinskii, V A; Uzeeva, N A ^[3]

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1. National Nuclear Research University 'Moscow Engineering Physics Institute (MEPhI)' (Russian Federation)
2. Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
3. Moscow State University (Russian Federation)

The paper is concerned with the theoretical and experimental studies of the band structure and electrical properties of InAlAs/InGaAs/InAlAs/InP heterostructures containing a composite InGaAs quantum well with InAs and GaAs nanoinserts. From the Shubnikov-de Haas effect, the effective cyclotron mass m{sub c}* is determined experimentally and calculated with consideration for the nonparabolicity of the electron energy spectrum. An approach to estimation of the effective mass is proposed and tested. The approach is based on weighted averaging of the m{sub c}* of the composite quantum well's constituent materials. A first proposed heterostructure containing two InAs inserts symmetrically arranged in the quantum well makes a 26% reduction in m{sub c}* compared to m{sub c}* in the lattice-matched In{sub 0.53}Ga{sub 0.47}As quantum well possible.

• OSTI ID: 22038999
• Journal Information: Semiconductors, Vol. 46, Issue 4; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EFFECTIVE MASS
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELECTRONS
ENERGY SPECTRA
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
MATERIALS
QUANTUM WELLS
SHUBNIKOV-DE HAAS EFFECT