Experimental evaluation of the carrier lifetime in GaAs grown at low temperature
- St. Petersburg State University (Physics Faculty) (Russian Federation)
- St. Petersburg State Polytechnic University (Russian Federation)
The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecular-beam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump-probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 {+-} 35) fs.
- OSTI ID:
- 22038983
- Journal Information:
- Semiconductors, Vol. 46, Issue 5; Other Information: Copyright (c) 2012 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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