Structural properties of InN films grown on O-face ZnO(0001) by plasma-assisted molecular beam epitaxy

Journal Article · Mon Apr 09 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3702572· OSTI ID:22025511

Cho, Yong Jin; Brandt, Oliver; Kaganer, Vladimir M; Ramsteiner, Manfred; Riechert, Henning ^[1]; Korytov, Maxim; Albrecht, Martin ^[2]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
2. Leibniz-Institut fuer Kristallzuechtung, Max-Born-Str. 2, 12489 Berlin (Germany)

We study the impact of substrate temperature and layer thickness on the morphological and structural properties of InN films directly grown on O-face ZnO(0001) substrates by plasma-assisted molecular beam epitaxy. With increasing substrate temperature, an interfacial reaction between InN and ZnO takes place that eventually results in the formation of cubic In{sub 2}O{sub 3} and voids. The properties of the InN films, however, are found to be unaffected by this reaction for substrate temperatures less than 550 deg. C. In fact, both the morphological and the structural quality of InN improve with increasing substrate temperature in the range from 350 to 500 deg. C. High quality films with low threading dislocation densities are demonstrated.

• OSTI ID: 22025511
• Journal Information: Applied Physics Letters, Vol. 100, Issue 15; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
CUBIC LATTICES
DISLOCATIONS
FILMS
INDIUM NITRIDES
INDIUM OXIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
PLASMA
SEMICONDUCTOR MATERIALS
SOLIDS
SUBSTRATES
TEMPERATURE DEPENDENCE
ZINC OXIDES