Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy

Journal Article · Tue Mar 15 00:00:00 EDT 2011 · Semiconductors

DOI:https://doi.org/10.1134/S1063782611030080· OSTI ID:22004844

Borodin, P A; Bukharaev, A A ^[1]; Isakov, M A; Shengurov, V G; Chalkov, V Yu; Denisov, Yu A ^[2]

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1. Russian Academy of Sciences, Zavoisky Physical Technical Institute, Kazan Scientific Center (Russian Federation)
2. Lobachevsky State University, Research Institute for Physics and Technology (Russian Federation)

The local density of states in self-assembled GeSi/Si(001) nanoislands is investigated for the first time by combined tunneling and atomic-force scanning microscopy. Current images and tunneling spectra of individual GeSi/Si(001) islands are obtained. These measurements yield the spatial and energy distributions of the local density of states in GeSi islands, respectively. The tunneling spectroscopy data demonstrate that uncapped Ge{sub 0.3}Si{sub 0.7}/Si(001) islands behave as type-I heterostructures.

• OSTI ID: 22004844
• Journal Information: Semiconductors, Vol. 45, Issue 3; Other Information: Copyright (c) 2011 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMIC FORCE MICROSCOPY
DENSITY
ENERGY SPECTRA
GERMANIUM SILICIDES
IMAGES
SPECTROSCOPY
TUNNEL EFFECT