skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Structure and resistivity of bismuth nanobelts in situ synthesized on silicon wafer through an ethanol-thermal method

Journal Article · · Journal of Solid State Chemistry
OSTI ID:21612825
; ;  [1];  [1]
  1. State Key Laboratory of Crystal Materials, Bio-Micro/Nano Functional Materials Center, Shandong University, Jinan 250100 (China)

Bismuth nanobelts in situ grown on a silicon wafer were synthesized through an ethanol-thermal method without any capping agent. The structure of the bismuth belt-silicon composite nanostructure was characterized by scanning electron microscope, energy-dispersive X-ray spectroscopy, and high resolution transmission electron microscope. The nanobelt is a multilayered structure 100-800 nm in width and over 50 {mu}m in length. One layer has a thickness of about 50 nm. A unique sword-like nanostructure is observed as the initial structure of the nanobelts. From these observations, a possible growth mechanism of the nanobelt is proposed. Current-voltage property measurements indicate that the resistivity of the nanobelts is slightly larger than that of the bulk bismuth material. - Graphical Abstract: TEM images, EDS, and electron diffraction pattern of bismuth nanobelts. Highlights: Black-Right-Pointing-Pointer Bismuth nanobelts in situ grown on silicon wafer were achieved. Black-Right-Pointing-Pointer Special bismuth-silicon nanostructure. Black-Right-Pointing-Pointer Potential application in sensitive magnetic sensor and other electronic devices.

OSTI ID:
21612825
Journal Information:
Journal of Solid State Chemistry, Vol. 184, Issue 12; Other Information: DOI: 10.1016/j.jssc.2011.10.010; PII: S0022-4596(11)00538-X; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0022-4596
Country of Publication:
United States
Language:
English