Strong circular photogalvanic effect in ZnO epitaxial films

Journal Article · Fri Dec 23 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3666571· OSTI ID:21612434

Zhang, Q; Wang, X Q; Yin, C M; Shen, B ^[1]; Chen, Y H; Chang, K ^[2]; Ge, W K ^[3]

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1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China)
2. Laboratory of Semiconductor Materials Science, Institute of Semiconductors, CAS, Beijing 100083 (China)
3. Department of Physics, Tsinghua University, Beijing 100871 (China)

A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

• OSTI ID: 21612434
• Journal Information: AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666571; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
BAND THEORY
CRYSTAL GROWTH
CURIE POINT
ELECTRIC CURRENTS
ELECTRONIC STRUCTURE
EXCITATION
GALLIUM NITRIDES
INDIUM NITRIDES
L-S COUPLING
MAGNETIC SEMICONDUCTORS
MOLECULAR BEAM EPITAXY
THIN FILMS
VALENCE
ZINC OXIDES
CHALCOGENIDES
COUPLING
CRYSTAL GROWTH METHODS
CURRENTS
ENERGY-LEVEL TRANSITIONS
EPITAXY
FILMS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INTERMEDIATE COUPLING
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR MATERIALS
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
ZINC COMPOUNDS