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Title: Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3666239· OSTI ID:21612389
; ;  [1]; ;  [2]
  1. Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)
  2. School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)

Magnetic field modulated photoreflectance measurements are performed on the dilute nitride semiconductor Ga(AsN) in quantizing magnetic fields. From the measured cyclotron energies, the conduction band effective mass and its dependence on the nitrogen content are determined. The effective mass is found to become significantly heavier in samples with high nitrogen composition (>0.1%).

OSTI ID:
21612389
Journal Information:
AIP Conference Proceedings, Vol. 1399, Issue 1; Conference: 30. international conference on the physics of semiconductors, Seoul (Korea, Republic of), 25-30 Jul 2010; Other Information: DOI: 10.1063/1.3666239; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English