Visible to vacuum-UV range optical absorption of oxygen dangling bonds in amorphous SiO{sub 2}
- Institute of Solid State Physics, University of Latvia, Kengaraga iela 8, LV1063 Riga (Latvia)
- Department of Applied Chemistry, Graduate School of Urban Environmental Sciences, Tokyo Metropolitan University, 1-1 Minami-Osawa, Hachioji 192-0397 (Japan)
- Frontier Collaborative Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)
Synthetic silica glass with an optical absorption spectrum dominated by oxygen dangling bonds (nonbridging oxygen hole centers, or NBOHCs) and having negligible (<1%) contribution from the usually copresent Si dangling bonds (E'-centers), was prepared by room temperature ultraviolet photobleaching of high SiOH content (''wet'') silica, irradiated by F{sub 2} laser (7.9 eV) at T = 80 K. This allowed us to obtain the up-to-now controversial optical absorption spectrum of NBOHC in the ultraviolet and vacuum-ultraviolet (UV-VUV) region of the spectrum and to show that it is semicontinuous from 4 to 7.8 eV and cannot be represented by a pair of distinct Gaussian bands. Since NBOHC is one of the main UV-VUV range optical absorbers in silica, its spectral shape provides a tool to disentangle contributions of different color centers to optical losses in this spectral region.
- OSTI ID:
- 21596924
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 84, Issue 20; Other Information: DOI: 10.1103/PhysRevB.84.205206; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ABSORPTION SPECTRA
AMORPHOUS STATE
E CENTERS
FAR ULTRAVIOLET RADIATION
OPTICAL PROPERTIES
OXYGEN
SILICON OXIDES
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATIONS
SILICON COMPOUNDS
SORPTION
SPECTRA
ULTRAVIOLET RADIATION
VACANCIES