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Title: Effects of Au layer thickness and number of bilayers on the properties of Au/ZnO multilayers

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3580333· OSTI ID:21560235
;  [1];  [2];  [3]; ;  [4];  [5];  [6]
  1. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, Madrid, 28049 (Spain)
  2. Institut Prime, UPR 3346 CNRS, Universite de Poitiers, Boulevard M. et P. Curie, F-86962 Futuroscope (France)
  3. Centre Conditions Extremes et Materiaux, Haute Temperature et Irradiation, 1D Avenue de la Recherche Scientifique, F-45071 Orleans Cedex 2 (France)
  4. Synchrotron-SOLEIL, L'Orme des Merisiers Saint-Aubin, BP 48, F-91192 Gif-sur-Yvette (France)
  5. Institut des Nanosciences de Paris, UMR 7588 CNRS, Universite Pierre et Marie Curie, 75252 Paris Cedex 5 (France)
  6. Laboratoire de Chimie Physique, UMR 8000, Universite Paris-Sud, CNRS, Batiment 349, 15 rue Georges Clemenceau, F-91405 Orsay cedex (France)

Multilayered films of Au/ZnO were prepared by physical vapor deposition. Varying the Au thickness, t{sub Au}, and the number of bilayers, n, allowed us to investigate the role of these parameters on the sample structural and electronic properties. X-ray diffraction, X-ray absorption spectroscopy, grazing incidence small angle X-ray scattering and transmission electron microscopy experiments, have been combined to UV-visible and infrared spectroscopy to characterize the multilayers in the as-prepared state and after annealing. In the as-prepared state, the strong Au and ZnO lattice interaction leads to ZnO epitaxy on Au. Gold appears either as continuous layers or in form of nanoparticles. ZnO experiences a structural transformation from wurztite to rock salt monitored by the Au morphology. Annealing at 500 deg. C destroys the lattice matching. The electronic and optical properties of the systems are understood in line with the Au morphology and ZnO structural state.

OSTI ID:
21560235
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 9; Other Information: DOI: 10.1063/1.3580333; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English