High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates

Journal Article · Wed Jun 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3597828· OSTI ID:21538449

Zhylik, A; Benediktovich, A ^[1]; Ulyanenkov, A; Guerault, H ^[2]; Myronov, M; Dobbie, A; Leadley, D R ^[3]; Ulyanenkova, T ^[4]

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1. Department of Theoretical Physics, Belarusian State University, 4 Fr. Nezavisimosti Avenue, 220030 Minsk, Republic of Belarus (Belarus)
2. Bruker AXS GmbH, Oestliche Rheinbrueckenstrasse 49, 76187 Karlsruhe (Germany)
3. Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom)
4. Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

This work presents a detailed characterization, using high-resolution x-ray diffraction, of multilayered Si{sub 1-x}Ge{sub x} heterostructures grown on (001), (011), and (111) Si substrates by reduced pressure chemical vapor deposition. Reciprocal space mapping has been used to determine both the strain and Ge concentration depth profiles within each layer of the heterostructures after initially determining the crystallographic tilt of all the layers. Both symmetric and asymmetric reciprocal space maps were measured on each sample, and the evaluation was performed simultaneously for the whole data set. The ratio of misfit to threading dislocation densities has been estimated for each individual layer based on an analysis of diffuse x-ray scattering from the defects.

• OSTI ID: 21538449
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 12; Other Information: DOI: 10.1063/1.3597828; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ASYMMETRY
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTALLOGRAPHY
CRYSTALS
DENSITY
DISLOCATIONS
GERMANIUM ALLOYS
GERMANIUM SILICIDES
HETEROJUNCTIONS
LAYERS
RELAXATION
RESOLUTION
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
STRAINS
SUBSTRATES
SYMMETRY
X-RAY DIFFRACTION
ALLOYS
CHEMICAL COATING
COHERENT SCATTERING
CRYSTAL STRUCTURE
DEPOSITION
DIFFRACTION
ELEMENTS
GERMANIUM COMPOUNDS
LINE DEFECTS
MATERIALS
PHYSICAL PROPERTIES
SCATTERING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SURFACE COATING