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Title: Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3556745· OSTI ID:21538167
; ; ;  [1];  [2]
  1. Frederick Seitz Materials Research Laboratory and the Materials Science and Engineering Department, University of Illinois, 104 South Goodwin Avenue, Urbana, Illinois 61801 (United States)
  2. Regroupement quebecois sur les materiaux de pointe and Departement de genie physique, Ecole Polytechnique de Montreal, P.O. Box 6079, Station Centre-Ville, Montreal, Quebec H3C 3A7 (Canada)

Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (T{sub s} = 45-230 deg. C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown - the abrupt growth mode transition from epitaxial to amorphous - at temperature-dependent critical film thicknesses h{sub 1}(T{sub s}). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T{sub s}-independent overall aspect ratio, we show that simulated data for w/d = 0.03 correspond to thicknesses h{sub 1{proportional_to}} exp (-E{sub 1}/kT{sub s}) with E{sub 1} = 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h{sub 1} values agree well with experimental data. Above a critical growth temperature of 170 deg. C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d = 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for T{sub s} > 170 deg. C as observed experimentally.

OSTI ID:
21538167
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 6; Other Information: DOI: 10.1063/1.3556745; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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