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Title: Defect engineering in GaAs using high energy light ion irradiation: Role of electronic energy loss

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3534003· OSTI ID:21538080
 [1];  [2]
  1. Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)
  2. School of Physical Sciences, Jawaharlal Nehru University, New Delhi 110067 (India)

We report on the application of high energy light ions (Li and O) irradiation for modification of defects, in particular, for annihilation of point defects using electronic energy loss in GaAs to minimize the defects produced by nuclear collisions. The high resolution x-ray diffraction and micro-Raman spectroscopy have been used to monitor that no lattice damage or amorphization take place due to irradiating ions. The effects of irradiation on defects and their energy levels have been studied using thermally stimulated current spectroscopy. It has been observed that till an optimum irradiation fluence of 10{sup 13} ions/cm{sup 2} there is annihilation of native defects but further increase in irradiation fluence results in accumulation of defects, which scales with the nuclear energy loss process, indicating that the rate of defects produced by the binary collision process exceeds rate of defect annihilation. Defect annihilation due to electronic energy loss has been discussed on the basis of breaking of bonds and enhanced diffusivity of ionized native defects.

OSTI ID:
21538080
Journal Information:
Journal of Applied Physics, Vol. 109, Issue 3; Other Information: DOI: 10.1063/1.3534003; (c) 2011 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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