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Title: Electrical characterization of HgTe nanowires using conductive atomic force microscopy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3512960· OSTI ID:21537968
 [1]; ; ;  [1]
  1. Norwegian Defence Research Establishment, P.O. Box 25, NO-2027 Kjeller (Norway)

Self-organized HgTe nanowires grown by molecular beam epitaxy (MBE) have been characterized using conductive atomic force microscopy. As HgTe will degrade or evaporate at normal baking temperatures for electron beam lithography (EBL) resists, an alternative method was developed. Using low temperature optical lithography processes, large Au contacts were deposited on a sample covered with randomly oriented, lateral HgTe nanowires. Nanowires partly covered by the large electrodes were identified with a scanning electron microscope and then localized in the atomic force microscope (AFM). The conductive tip of the AFM was then used as a movable electrode to measure current-voltage curves at several locations on HgTe nanowires. The measurements revealed that polycrystalline nanowires had diffusive electron transport, with resistivities two orders of magnitude larger than that of an MBE-grown HgTe film. The difference can be explained by scattering at the rough surface walls and at the grain boundaries in the wires. The method can be a solution when EBL is not available or requires too high temperature, or when measurements at several positions along a wire are required.

OSTI ID:
21537968
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 11; Other Information: DOI: 10.1063/1.3512960; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English