Band gap formation in graphene by in-situ doping

Journal Article · Mon May 16 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3589364· OSTI ID:21518445

Park, Jeongho; Mitchel, W C; Brown, Gail J; Grazulis, Lawrence; Smith, Howard E; Pacley, Shanee D; Boeckl, John J; Eyink, Kurt G; Mou, Shin; Tomich, David H; Hoelscher, John E ^[1]; Elhamri, Said ^[2]

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1. Air Force Research Laboratory-Materials and Manufacturing Directorate (AFRL/RXPS), Wright-Patterson AFB, Ohio 45433-7707 (United States)
2. Department of Physics, University of Dayton, Dayton, Ohio 45469 (United States)

We report the formation of band gaps in as-grown stacks of epitaxial graphene with opposite doping. Control of in-situ doping during carbon source molecular beam epitaxy growth on SiC was achieved by using different carbon sources. Doping heterostructures were grown by stacking n-type material from a C{sub 60} source on p-type material from a graphite filament source. Activation energies for the resistivity and carrier concentration indicated band gaps up to 200 meV. A photoconductivity threshold was observed in the range of the electrical activation energies. Band gap formation is attributed to electric fields induced by spatially separated ionized dopants of opposite charge.

• OSTI ID: 21518445
• Journal Information: Applied Physics Letters, Vol. 98, Issue 20; Other Information: DOI: 10.1063/1.3589364; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
ACTIVATION ENERGY
CARBON
CARBON SOURCES
CHARGE CARRIERS
DENSITY
DOPED MATERIALS
ELECTRIC FIELDS
ENERGY GAP
FILAMENTS
FULLERENES
GRAPHITE
HONEYCOMB STRUCTURES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOCONDUCTIVITY
SILICON CARBIDES
CARBIDES
CARBON COMPOUNDS
CRYSTAL GROWTH METHODS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY
EPITAXY
MATERIALS
MECHANICAL STRUCTURES
MINERALS
NONMETALS
PHYSICAL PROPERTIES
SILICON COMPOUNDS