Full band structure calculation of two-photon indirect absorption in bulk silicon
- Department of Physics, Institute for Optical Sciences, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada)
Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.
- OSTI ID:
- 21518348
- Journal Information:
- Applied Physics Letters, Vol. 98, Issue 13; Other Information: DOI: 10.1063/1.3570654; (c) 2011 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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