PULSION registered HP: Tunable, High Productivity Plasma Doping

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548413· OSTI ID:21510112

Felch, S B; Torregrosa, F; Etienne, H; Spiegel, Y; Roux, L; Turnbaugh, D ^[1]

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1. Ion Beam Services, ZI Peynier-Rousset, Rue Gaston Imbert prolongee, 13790 Peynier (France)

Plasma doping has been explored for many implant applications for over two decades and is now being used in semiconductor manufacturing for two applications: DRAM polysilicon counter-doping and contact doping. The PULSION HP is a new plasma doping tool developed by Ion Beam Services for high-volume production that enables customer control of the dominant mechanism--deposition, implant, or etch. The key features of this tool are a proprietary, remote RF plasma source that enables a high density plasma with low chamber pressure, resulting in a wide process space, and special chamber and wafer electrode designs that optimize doping uniformity.

• OSTI ID: 21510112
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548413; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
ATOMIC FORCE MICROSCOPY
DEPOSITION
DESIGN
DOPED MATERIALS
ELECTRIC CONTACTS
ELECTRODES
ETCHING
ION BEAMS
PLASMA
PLASMA DENSITY
POLYCRYSTALS
RF SYSTEMS
SEMICONDUCTOR MATERIALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY
BEAMS
CRYSTALS
ELECTRICAL EQUIPMENT
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
MATERIALS
MICROSCOPY
SEMIMETALS
SURFACE FINISHING