Strain tensors in layer systems by precision ion channeling measurements

Journal Article · Tue Jun 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3415530· OSTI ID:21476335

Trinkaus, H; Buca, D; Hollaender, B; Minamisawa, R A; Mantl, S ^[1]; Hartmann, J M ^[2]

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1. Institute of Bio- and Nanosystems (IBN 1) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Juelich, D-52425 Juelich (Germany)
2. CEA-LETI, MINATEC, 17 Rue des Martyrs, F-38054 Grenoble, Cedex 9 (France)

A powerful method for analyzing general strain states in layer systems is the measurement of changes in the ion channeling directions. We present a systematic derivation and compilation of the required relations between the strain induced angle changes and the components of the strain tensor for general crystalline layer systems of reduced symmetry compared to the basic (cubic) crystal. It is shown that, for the evaluation of channeling measurements, virtually all layers of interest may be described as being 'pseudo-orthorhombic'. The commonly assumed boundary conditions and the effects of surface misorientations on them are discussed. Asymmetric strain relaxation in layers of reduced symmetry is attributed to a restriction in the slip system of the dislocations inducing it. The results are applied to {l_brace}110{r_brace}SiGe/Si layer systems.

• OSTI ID: 21476335
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 12; Other Information: DOI: 10.1063/1.3415530; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ASYMMETRY
BOUNDARY CONDITIONS
CRYSTALS
DISLOCATIONS
GERMANIUM SILICIDES
ION CHANNELING
LAYERS
ORTHORHOMBIC LATTICES
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICON
SLIP
STRAINS
STRESS RELAXATION
SURFACES
TENSORS
CHANNELING
CRYSTAL DEFECTS
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELEMENTS
GERMANIUM COMPOUNDS
LINE DEFECTS
MATERIALS
RELAXATION
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
STRESSES