Investigation of the internal electric field in cadmium zinc telluride detectors using the Pockels effect and the analysis of charge transients

Journal Article · Fri Jan 15 00:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3272882· OSTI ID:21476110

Groza, Michael; Yunlong, Cui; Buliga, Vladimir; Guo, Mingsheng; Coca, Constantine; Burger, Arnold ^[1]; Krawczynski, Henric; Garson, Alfred III; Martin, Jerrad W; Lee, Kuen; Qiang, Li; Beilicke, Matthias ^[2]

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1. Department of Physics, Fisk University, 1000 17th Ave., Nashville, Tennessee 37208 (United States)
2. Department of Physics and Astronomy, Washington University in St. Louis, 1 Brookings Dr., CB 1105, St. Louis, Missouri 61130 (United States)

The Pockels electro-optic effect can be used to investigate the internal electric field in cadmium zinc telluride (CZT) single crystals that are used to fabricate room temperature x and gamma radiation detectors. An agreement is found between the electric field mapping obtained from Pockels effect images and the measurements of charge transients generated by alpha particles. The Pockels effect images of a CZT detector along two mutually perpendicular directions are used to optimize the detector response in a dual anode configuration, a device in which the symmetry of the internal electric field with respect to the anode strips is of critical importance. The Pockels effect is also used to map the electric field in a CZT detector with dual anodes and an attempt is made to find a correlation with the simulated electric potential in such detectors. Finally, the stress-induced birefringence effects seen in the Pockels images are presented and discussed.

• OSTI ID: 21476110
• Journal Information: Journal of Applied Physics, Vol. 107, Issue 2; Other Information: DOI: 10.1063/1.3272882; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
36 MATERIALS SCIENCE
ALPHA DETECTION
BIREFRINGENCE
CADMIUM COMPOUNDS
CORRELATIONS
ELECTRIC FIELDS
ELECTRO-OPTICAL EFFECTS
GAMMA DETECTION
IMAGES
MONOCRYSTALS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
TRANSIENTS
X-RAY DETECTION
ZINC COMPOUNDS
CHARGED PARTICLE DETECTION
CRYSTALS
DETECTION
MATERIALS
MEASURING INSTRUMENTS
RADIATION DETECTION
RADIATION DETECTORS
REFRACTION
TEMPERATURE RANGE