Formation of epitaxial metastable NiGe{sub 2} thin film on Ge(100) by pulsed excimer laser anneal

Journal Article · Mon Nov 01 00:00:00 EDT 2010 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3514242· OSTI ID:21464543

Lim, Phyllis S. Y.; Yeo, Yee-Chia ^[1]; Chi, Dong Zhi; Lim, Poh Chong ^[2]; Wang, Xin Cai ^[3]; Chan, Taw Kuei; Osipowicz, Thomas ^[4]

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1. Department of Electrical and Computer Engineering and NUS Graduate School for Integrative Sciences and Engineering (NGS), National University of Singapore (NUS), 10 Kent Ridge Crescent, Singapore 117576 (Singapore)
2. Institute of Materials Research and Engineering, Agency for Science, Technology, and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore)
3. Singapore Institute of Manufacturing Technology, Agency for Science, Technology, and Research (A-STAR), 71 Nanyang Drive, Singapore 638075 (Singapore)
4. Department of Physics, Centre for Ion Beam Applications (CIBA), National University of Singapore, 2 Science Drive 3, Singapore 117542 (Singapore)

Epitaxial nickel digermanide (NiGe{sub 2}), a metastable phase, was formed by laser annealing Ni on (100) germanium-on-silicon substrates. The NiGe{sub 2} formation was investigated using transmission electron microscopy, energy dispersive x-ray spectroscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and first-principles calculations. The formation mechanism of NiGe{sub 2} is discussed and is attributed to both the reduced interfacial energy at the NiGe{sub 2}/Ge(100) interface and the kinetic aspects of the laser annealing reaction associated with phase transformation and film agglomeration.

• OSTI ID: 21464543
• Journal Information: Applied Physics Letters, Vol. 97, Issue 18; Other Information: DOI: 10.1063/1.3514242; (c) 2010 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL STRUCTURE
ENERGY BEAM DEPOSITION
EPITAXY
EXCIMER LASERS
GERMANIUM
INTERFACES
INTERMETALLIC COMPOUNDS
LASER RADIATION
NICKEL
PHASE TRANSFORMATIONS
PULSED IRRADIATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SURFACE ENERGY
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
ALLOYS
COHERENT SCATTERING
CRYSTAL GROWTH METHODS
DEPOSITION
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
ELEMENTS
ENERGY
FILMS
FREE ENERGY
GAS LASERS
HEAT TREATMENTS
IRRADIATION
LASERS
MATERIALS
METALS
MICROSCOPY
PHYSICAL PROPERTIES
RADIATIONS
SCATTERING
SEMIMETALS
SPECTROSCOPY
SURFACE COATING
SURFACE PROPERTIES
THERMODYNAMIC PROPERTIES
TRANSITION ELEMENTS