Fractal simulation of the resistivity and capacitance of arsenic selenide
- Russian Academy of Sciences, Division of Physical Problems, Buryat Scientific Center, Siberian Branch (Russian Federation)
The temperature dependences of the ac resistivity R and ac capacitance C of arsenic selenide were measured more than four decades ago [V. I. Kruglov and L. P. Strakhov, in Problems of Solid State Electronics, Vol. 2 (Leningrad Univ., Leningrad, 1968)]. According to these measurements, the frequency dependences are R {proportional_to} {omega}{sup -0.80{+-}0.01} and {Delta}C {proportional_to} {omega}{sup -0.120{+-}0.006} ({omega} is the circular frequency and {Delta}C is measured from the temperature-independent value C{sub 0}). According to fractal-geometry methods, R {proportional_to} {omega}{sup 1-3/h} and {Delta}C {proportional_to} {omega}{sup -2+3/h}, where h is the walk dimension of the electric current in arsenic selenide. Comparison of the experimental and theoretical results indicates that the walk dimensions calculated from the frequency dependences of resistivity and capacitance are h{sub R} = 1.67 {+-} 0.02 and h{sub C} = 1.60 {+-} 0.08, which are in agreement with each other within the measurement errors. The fractal dimension of the distribution of conducting sections is D = 1/h = 0.6. Since D < 1, the conducting sections are spatially separated and form a Cantor set.
- OSTI ID:
- 21443578
- Journal Information:
- Journal of Experimental and Theoretical Physics, Vol. 110, Issue 3; Other Information: DOI: 10.1134/S106377611003009X; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC SELENIDES
CAPACITANCE
COMPARATIVE EVALUATIONS
COMPUTERIZED SIMULATION
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
FRACTALS
FREQUENCY DEPENDENCE
TEMPERATURE DEPENDENCE
ARSENIC COMPOUNDS
CHALCOGENIDES
CURRENTS
ELECTRICAL PROPERTIES
EVALUATION
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SIMULATION