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Title: Investigation on the structural and electrical properties of NdSrNi{sub 1-x}Cr{sub x}O{sub 4+{delta}} (0.1<=x<=0.9) system

Journal Article · · Journal of Solid State Chemistry
; ;  [1]
  1. Unite de Recherche de Chimie des Materiaux (02/UR/12-01), ISSBAT, Universite de Tunis El Manar, 9 Avenue Dr. Zoheir Safi, 1006 Tunis (Tunisia)

The phases NdSrNi{sub 1-x}Cr{sub x}O{sub 4+{delta}} (0.1<=x<=0.9) have been synthesized by modified sol-gel method and subsequent annealing at 1250 deg. C in 1 atm of flowing argon. X-ray diffraction (XRD) analysis and electrical resistivity have been measured at room temperature. Rietveld refinement shows that all compositions with x>0.1 were found to crystallize in the tetragonal K{sub 2}NiF{sub 4} type structure in the space group I4/mmm, while for x=0.1, a mixture of two phases with the tetragonal space group I4/mmm and the orthorhombic space group Fmmm. Variations of a and c parameters show a complex behavior with increasing chromium content. It was established that compounds with chromium content less then x<=0.5 are oxygen-deficient, while for x>0.5 the sample are oxygen-overstoichiometric. The NdSrNi{sub 0.5}Cr{sub 0.5}O{sub 4+{delta}} compound exhibits semiconductive behavior and the electrical transport mechanism agrees with the non-adiabatic small polaron hopping model in the temperature ranges 298-493, 493-573 and 573-703 K separately. - Graphical abstract: The X-ray pattern of the x=0.1 sample showed a shift of some Bragg reflections that was indicative of a unit cell of lower symmetry. Two distortions of the I4/mmm K{sub 2}NiF{sub 4} aristotype cell to orthorhombic symmetry are known, Fmmm and I mmm, depending on which of the <1 0 0> and <1 1 0> sets of mirror planes and twofold axes are lost together with the fourfold axis when the symmetry is lowered

OSTI ID:
21372610
Journal Information:
Journal of Solid State Chemistry, Vol. 183, Issue 5; Other Information: DOI: 10.1016/j.jssc.2010.03.028; PII: S0022-4596(10)00118-0; Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; ISSN 0022-4596
Country of Publication:
United States
Language:
English