Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures
- Dpto. Fisica Aplicada, University of Vigo, E-36310 Vigo (Spain)
- Dpto. Mecanica, Maquinas, Motores Termicos y Fluidos, University of Vigo, E-36310 Vigo (Spain)
- CACTI, University of Vigo, E-36310 Vigo (Spain)
Ultraviolet (UV) Excimer laser assisted processing is an alternative strategy for producing patterned silicon germanium heterostructures. We numerically analyzed the effects caused by pulsed 193 Excimer laser radiation impinging on patterned amorphous hydrogenated silicon (a-Si:H) and germanium (a-Ge:H) bilayers deposited on a crystalline silicon substrate [Si(100)]. The proposed two dimensional axisymmetric numerical model allowed us to estimate the temperature and concentration gradients caused by the laser induced rapid melting and solidification processes. Energy density dependence of maximum melting depth and melting time evolution as well as three dimensional temperature and element distribution have been simulated and compared with experimentally obtained results.
- OSTI ID:
- 21367006
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 1; Other Information: DOI: 10.1063/1.3452341; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
AXIAL SYMMETRY
ENERGY DENSITY
EXCIMER LASERS
FINITE ELEMENT METHOD
GERMANIUM
GERMANIUM ALLOYS
GERMANIUM SILICIDES
HETEROJUNCTIONS
LASER MATERIALS
LAYERS
MELTING
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS
SIMULATION
SOLIDIFICATION
SUBSTRATES
THREE-DIMENSIONAL CALCULATIONS
TWO-DIMENSIONAL CALCULATIONS
ULTRAVIOLET RADIATION
ALLOYS
CALCULATION METHODS
ELECTROMAGNETIC RADIATION
ELEMENTS
GAS LASERS
GERMANIUM COMPOUNDS
LASERS
MATERIALS
MATHEMATICAL SOLUTIONS
METALS
NUMERICAL SOLUTION
PHASE TRANSFORMATIONS
RADIATIONS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SYMMETRY