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Title: Correlation between surface chemistry and ion energy dependence of the etch yield in multicomponent oxides etching

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3223350· OSTI ID:21361822
; ; ;  [1]; ; ;  [2]
  1. Departement de Physique, Universite de Montreal, C.P. 6128, Succ. Centre-ville, Montreal, Quebec H3C 3J7 (Canada)
  2. INRS-EMT, 1650 Boulevard Lionel Boulet, Varennes, Quebec J3X 1S2 (Canada)

The influence of surface chemistry in plasma etching of multicomponent oxides was investigated through measurements of the ion energy dependence of the etch yield. Using pulsed-laser-deposited Ca{sub x}Ba{sub (1-x)}Nb{sub 2}O{sub 6} (CBN) and SrTiO{sub 3} thin films as examples, it was found that the etching energy threshold shifts toward values larger or smaller than the sputtering threshold depending on whether or not ion-assisted chemical etching is the dominant etching pathway and whether surface chemistry is enhancing or inhibiting desorption of the film atoms. In the case of CBN films etched in an inductively coupled Cl{sub 2} plasma, it is found that the chlorine uptake is inhibiting the etching reaction, with the desorption of nonvolatile NbCl{sub 2} and BaCl{sub 2} compounds being the rate-limiting step.

OSTI ID:
21361822
Journal Information:
Journal of Applied Physics, Vol. 106, Issue 6; Other Information: DOI: 10.1063/1.3223350; (c) 2009 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English