Charging and discharging in ion implanted dielectric films used for capacitive radio frequency microelectromechanical systems switch

Journal Article · Mon Jun 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3147862· OSTI ID:21352268

Gang, Li; Xuyuan, Chen ^[1]; Haisheng, San ^[1]

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1. Pen-Tung Sah Micro-Electro-Mechanical Systems Research Center, Xiamen University, Xiamen, Fujian 361005 (China)

In this work, metal-insulator-semiconductor (MIS) capacitor structure was used to investigate the dielectric charging and discharging in the capacitive radio frequency microelectromechanical switches. The insulator in MIS structure is silicon nitride films (SiN), which were deposited by either low pressure chemical vapor deposition (LPCVD) or plasma enhanced chemical vapor deposition (PECVD) processes. Phosphorus or boron ions were implanted into dielectric layer in order to introduce impurity energy levels into the band gap of SiN. The relaxation processes of the injected charges in SiN were changed due to the ion implantation, which led to the change in relaxation time of the trapped charges. In our experiments, the space charges were introduced by stressing the sample electrically with dc biasing. The effects of implantation process on charge accumulation and dissipation in the dielectric are studied by capacitance-voltage (C-V) measurement qualitatively and quantitatively. The experimental results show that the charging and discharging behavior of the ion implanted silicon nitride films deposited by LPCVD is quite different from the one deposited by PECVD. The charge accumulation in the dielectric film can be reduced by ion implantation with proper dielectric deposition method.

• OSTI ID: 21352268
• Journal Information: Journal of Applied Physics, Vol. 105, Issue 12; Other Information: DOI: 10.1063/1.3147862; (c) 2009 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON IONS
CAPACITANCE
CAPACITORS
CHEMICAL VAPOR DEPOSITION
DIELECTRIC MATERIALS
ELECTRIC POTENTIAL
ENERGY GAP
ENERGY LEVELS
ION IMPLANTATION
LAYERS
PHOSPHORUS
PLASMA
RADIOWAVE RADIATION
RELAXATION
RELAXATION TIME
SEMICONDUCTOR MATERIALS
SILICON NITRIDES
SPACE CHARGE
THIN FILMS
CHARGED PARTICLES
CHEMICAL COATING
DEPOSITION
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FILMS
IONS
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SILICON COMPOUNDS
SURFACE COATING