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Title: Strong localization effect in magnetic two-dimensional hole systems

We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S=5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by the manganese doping density or by tuning the two-dimensional hole density p via field effect. The data reveal that the ratio between p and manganese ions inside or in close vicinity to the channel enlarges the strong localization effect. Moreover, asymmetric broadening of the doping layer due to manganese segregation is significantly influenced by strain in the heterostructure.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [1] ;  [1] ;  [4]
  1. Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg (Germany)
  2. (Germany)
  3. Institute of Applied Physics, University of Hamburg, 20355 Hamburg (Germany)
  4. (Switzerland)
Publication Date:
OSTI Identifier:
21347239
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 96; Journal Issue: 2; Other Information: DOI: 10.1063/1.3291673; (c) 2010 American Institute of Physics
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; ASYMMETRY; CRYSTAL GROWTH; DOPED MATERIALS; HOLES; INDIUM ARSENIDES; LAYERS; MAGNETIC MOMENTS; MANGANESE; MANGANESE IONS; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SEGREGATION; SEMICONDUCTOR MATERIALS; TWO-DIMENSIONAL CALCULATIONS ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; INDIUM COMPOUNDS; IONS; MATERIALS; METALS; NANOSTRUCTURES; PNICTIDES; TRANSITION ELEMENTS