Photochemical Deposition of Semiconductor Thin Films and Their Application for Solar Cells and Gas Sensors
- Dept. Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology Gokiso, Showa, Nagoya 466-8555 (Japan)
The photochemical deposition (PCD) technique was applied for solar cells and gas sensors. CdS and Cd{sub 1-x}Zn{sub x}S were deposited by PCD. Thiosulfate ions S{sub 2}O{sub 3}{sup 2-} act as a reductant and a sulfur source. The SnS absorption layer was deposited by three-step pulse electrochemical deposition. For the CdS/SnS structure, the best cell showed an efficiency of about 0.2%, while for the Cd{sub 1-x}Zn{sub x}S/SnS structure, an efficiency of up to 0.7% was obtained. For the gas sensor application, SnO{sub 2} was deposited by PCD from a solution containing SnSO{sub 4} and HNO{sub 3}. To enhance the sensitivity to hydrogen, Pd was doped by the photochemical doping method. The current increased by a factor of 10{sup 4} upon exposure to 5000 ppm hydrogen within 1 min at room temperature. 10{sup 3} times conductivity increase was observed even for 50 ppm hydrogen.
- OSTI ID:
- 21304978
- Journal Information:
- AIP Conference Proceedings, Vol. 1136, Issue 1; Conference: International conference on nanoscience and nanotechnology 2008, Shah Alam, Selangor (Malaysia), 18-21 Nov 2008; Other Information: DOI: 10.1063/1.3160117; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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