Direct-current effects on magnetization reversal properties of submicron-size Permalloy patterns for radio-frequency devices
- Holcombe Department of Electrical and Computer Engineering, Clemson University, Clemson, South Carolina 29631 (United States)
- Material Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Ferromagnetic resonance (FMR) spectroscopy is used to measure direct-current (dc) effects on the magnetization reversal properties of submicron-sized lateral patterned magnetic material. The observed FMR frequency-field relationship shows that for both 240 and 550 nm wide Permalloy (Py) nanowires the coercivity is reduced by {approx}33% when a 50 mA dc passes through the transmission line where the nanowires are incorporated. The temperature dependence of the coercivity has a {radical}(T) relationship which suggests the coherent rotation mode tendency in such 100 nm thick Py nanowires.
- OSTI ID:
- 21294501
- Journal Information:
- Applied Physics Letters, Vol. 95, Issue 23; Other Information: DOI: 10.1063/1.3271777; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Direct-current effects on magnetization reversal properties of submicron-size permalloy patterns for radio-frequency devices.
Direct current effects on high-frequency properties of patterned permalloy thin films.
Application of sub-micrometer patterned permalloy thin film in tunable radio frequency inductors
Journal Article
·
Thu Jan 01 00:00:00 EST 2009
· Appl. Phys. Lett.
·
OSTI ID:21294501
+1 more
Direct current effects on high-frequency properties of patterned permalloy thin films.
Journal Article
·
Tue Dec 01 00:00:00 EST 2009
· IEEE Trans Mag.
·
OSTI ID:21294501
+1 more
Application of sub-micrometer patterned permalloy thin film in tunable radio frequency inductors
Journal Article
·
Tue Apr 21 00:00:00 EDT 2015
· Journal of Applied Physics
·
OSTI ID:21294501
+3 more