Effect of Ti Doping on Structural and Electrical Properties of Ba(Fe{sub 0.5}Nb{sub .0.5})O{sub 3} Ceramic
- Department of Physics and Meteorology, IIT, Kharagpur 721302 (India)
Polycrystalline samples of Ba(Fe{sub 1-x}Ti{sub 2x}Nb{sub 1-x}){sub 0.5}O{sub 3}(BFTN) with x = 0, 0.1, 0.2 have been synthesized using a high-temperature solid-state reaction technique. The X-ray diffraction of the sample (x = 0) at room temperature shows a monoclinic phase. When the doped contents of Ti are over 10 mole% the structure changes from monoclinic to tetragonal. Scanning electron micrographs of the compounds show that grains are uniformly and densely distributed over the entire surface of the sample. The complex impedance plots show that there is only bulk (grain) contribution in the compounds in the said temperature range, and is of non-Debye type of relaxation. Bulk resistance of the material has been observed to be concentration dependent. Conductivity analysis indicates that ac/dc conductivity of the materials increases with increase in temperature. It shows a typical negative temperature coefficient of resistance (NTCR) behaviour like a semiconductor. The conductivity has been found to decrease on Ti doping.
- OSTI ID:
- 21251605
- Journal Information:
- AIP Conference Proceedings, Vol. 1063, Issue 1; Conference: IWMNMM-2008: International workshop on mesoscopic, nanoscopic and macroscopic materials, Bhubaneswar (India), 2-4 Jan 2008; Other Information: DOI: 10.1063/1.3027177; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BARIUM COMPOUNDS
CERAMICS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON SCANNING
FERRITES
IMPEDANCE
MONOCLINIC LATTICES
NANOSTRUCTURES
NIOBATES
POLYCRYSTALS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE COEFFICIENT
TEMPERATURE RANGE 0273-0400 K
TITANIUM
X-RAY DIFFRACTION