Ion beam mixing of metal/fluoropolymer interfaces
- Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Southwest Missouri State University, Springfield, Missouri 65804 (United States)
- Center for Interfacial Engineering, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
- Acadiana Research Laboratory, University of Southwestern Louisiana, Lafayette, Louisiana 70504 (United States)
Ion beam mixing of metals and polymers with very low dielectric constants such as Teflon can provide many applications in the area of electronic materials. This work is a study of the 'mixing' effect of 50 keV nitrogen implanted thin metal layers on Teflon PTFE (polytetrafluoroethylene) substrates. RBS analysis shows that the distribution of thin layers of copper and chromium (approximately 300-400 A thick) through the implant layer of the Teflon depends on the reactivity of the metal. As the implant fluence is increased, the distribution of metal atoms in the polymer matrix becomes concentrated over smaller ranges near the bottom of the implant layer. In situ RGA analysis during the implantation shows the liberation of an abundance of fluorine in many different forms. This is supported by results from a NRA experiment that shows the non-uniform concentration profile of fluorine throughout the implant layer. During the implantation process, the fluorine is released through the incident ion track leaving a carbon and metal rich region near the surface of the implant layer. The fluorine density increases with depth through the implant layer making a smooth transition to the undamaged bulk Teflon below. Low dielectric materials with highly conductive surfaces, such as this one, may provide an opportunity for a broad range of new microelectronic applications.
- OSTI ID:
- 21208058
- Journal Information:
- AIP Conference Proceedings, Vol. 475, Issue 1; Conference: 15. international conference on the application of accelerators in research and industry, Denton, TX (United States), 4-7 Nov 1998; Other Information: DOI: 10.1063/1.59289; (c) 1999 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
EFFECTS OF TRITIUM EXPOSURE ON UHMW-PE, PTFE, AND VESPEL
Processable fluoropolymers with low dielectric constants: Preparation and structure-property relationships of polyacrylates and polymethacrylates
Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARBON
CHROMIUM
COPPER
DIELECTRIC MATERIALS
FLUORINE
INTERFACES
ION BEAMS
ION IMPLANTATION
KEV RANGE
LAYERS
NITROGEN IONS
NUCLEAR REACTION ANALYSIS
PERMITTIVITY
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SUBSTRATES
SURFACES
TEFLON
THIN FILMS