Nanostructured zinc oxide films synthesized by successive chemical solution deposition for gas sensor applications

Journal Article · Thu Jan 08 00:00:00 EST 2009 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2008.04.006· OSTI ID:21195058

Lupan, O ^[1]; Chow, L ^[2]; Shishiyanu, S ^[1]; Monaico, E ^[3]; Shishiyanu, T; Sontea, V ^[1]; Roldan Cuenya, B; Naitabdi, A; Park, S; Schulte, A ^[2]

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1. Department of Microelectronics and Semiconductor Devices, Technical University of Moldova, 168 Stefan cel Mare Blvd., MD-2004 Chisinau (Moldova, Republic of)
2. Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, FL 32816-2385 (United States)
3. National Center for Materials Study and Testing, Technical University of Moldova, 168 Stefan cel Mare Blvd., MD-2004 Chisinau (Moldova, Republic of)

Nanostructured ZnO thin films have been deposited using a successive chemical solution deposition method. The structural, morphological, electrical and sensing properties of the films were studied for different concentrations of Al-dopant and were analyzed as a function of rapid photothermal processing temperatures. The films were investigated by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron and micro-Raman spectroscopy. Electrical and gas sensitivity measurements were conducted as well. The average grain size is 240 and 224 A for undoped ZnO and Al-doped ZnO films, respectively. We demonstrate that rapid photothermal processing is an efficient method for improving the quality of nanostructured ZnO films. Nanostructured ZnO films doped with Al showed a higher sensitivity to carbon dioxide than undoped ZnO films. The correlations between material compositions, microstructures of the films and the properties of the gas sensors are discussed.

• OSTI ID: 21195058
• Journal Information: Materials Research Bulletin, Vol. 44, Issue 1; Other Information: DOI: 10.1016/j.materresbull.2008.04.006; PII: S0025-5408(08)00135-9; Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON DIOXIDE
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
GRAIN SIZE
NANOSTRUCTURES
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SENSITIVITY
SENSORS
SYNTHESIS
THIN FILMS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY
ZINC OXIDES